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NTDV20N06T4G - onsemi

Description: RoHS Compliant; Lower Reverse Recovery Stored Charge; Lower Diode Reverse Recovery Time; Lower and Tighter VSD; Lower Capacitances; Lower VDS(on); Lower RDS(on); Lower Total Gate Charge

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Part Image NTD20N06T4G onsemi

Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTDV20N06T4G-VF01 onsemi

Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET