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NTDV20N06T4G-VF01 - onsemi

Description: RoHS Compliant; Lower Reverse Recovery Stored Charge; Lower Diode Reverse Recovery Time; Lower and Tighter VSD; Lower Capacitances; Lower VDS(on); Lower RDS(on); Lower Total Gate Charge

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NTDV20N06T4G-VF01 - onsemi PCB footprint - Other - Other - NTDV20N06T4G-VF01-1
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NTDV20N06T4G-VF01 - onsemi  - 3D model - Other - NTDV20N06T4G-VF01-1
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NTDV20N06T4G-VF01 Details

  • Manufacturer Part Number:

    NTDV20N06T4G-VF01

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DPAK-3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2017-04-17

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    60 W

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    140 ns

NTDV20N06T4G-VF01 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NTDV20N06T4G-VF01 is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation of NTDV20N06T4G-VF01 in high-temperature environments, it is recommended to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and keeping the junction temperature below 150°C.
  • The maximum allowed voltage on the gate of NTDV20N06T4G-VF01 is ±20V, but it is recommended to keep the gate voltage between -5V and +15V for reliable operation.
  • Yes, NTDV20N06T4G-VF01 is suitable for high-frequency switching applications up to 100kHz, but it is recommended to follow proper design practices, such as using a gate driver and ensuring proper PCB layout, to minimize switching losses and EMI.
  • To protect NTDV20N06T4G-VF01 from ESD, it is recommended to follow proper handling and storage procedures, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging, and to ensure that the device is properly grounded during assembly and testing.

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NTDV20N06T4G-VF01 Overview

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