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NTD20N06T4G - onsemi

Description: Power MOSFET, N Channel, 60 V, 20 A, 0.0375 ohm, TO-252 (DPAK), Surface Mount

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PCB Footprints
NTD20N06T4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_2025-23
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3D Models
NTD20N06T4G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_2025-23
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NTD20N06T4G Details

  • Manufacturer Part Number:

    NTD20N06T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    67 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    60 W

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    140 ns

NTD20N06T4G Frequently Asked Questions (FAQs)

  • The maximum SOA for the NTD20N06T4G is typically defined by the device's voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the application and operating conditions.
  • To ensure proper thermal management, it's crucial to provide adequate heat sinking, such as using a heat sink or thermal pad, and to follow the recommended PCB layout and thermal design guidelines outlined in the datasheet and application notes.
  • The recommended gate drive circuits for the NTD20N06T4G typically involve using a gate driver IC, such as the FAN5350, along with a suitable gate resistor and capacitor. Consult the datasheet and application notes for specific guidance on gate drive circuit design.
  • To ensure ESD protection for the NTD20N06T4G, it's essential to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in the system design.
  • The reliability and lifespan expectations for the NTD20N06T4G are typically dependent on factors such as operating conditions, temperature, and usage patterns. Consult the datasheet and reliability reports for specific guidance on the device's expected lifespan and reliability.

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NTD20N06T4G Overview

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