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NTH4L067N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 80 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 55 m Ω; Internal Gate Resistance: 0.6 Ω

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NTH4L067N65S3H - onsemi

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