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NTHL040N65S3HF - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 159 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1367 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 32 mΩ

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NTHL040N65S3HF - onsemi

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