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NTHS5441T1G - onsemi

Description: Miniature ChipFET Surface Mount Package; Low RDS(on); Higher Efficiency Extending Battery Life; Logic Level Gate Drive

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NTHS5441T1G Details

  • Manufacturer Part Number:

    NTHS5441T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    ChipFET

  • Package Description:

    CHIPFET-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    1206A-03

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.9 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHS5441T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a bias voltage (VBIAS) to operate correctly. Ensure VIN is within the recommended range (4.5V to 18V) and VBIAS is set to 5V ± 10%.
  • The maximum junction temperature (TJ) is 150°C. Ensure the device is operated within the recommended temperature range (-40°C to 125°C) to prevent thermal damage.
  • Handle the device with an ESD wrist strap or mat, and ensure all equipment is grounded. Use ESD-sensitive packaging and storage materials to prevent damage during shipping and storage.
  • A 10uF to 22uF ceramic or film capacitor with a voltage rating of 25V or higher is recommended. The capacitor should be placed as close to the VIN pin as possible to minimize noise and ripple.

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NTHS5441T1G Overview

Use the download button to access the NTHS5441T1G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image NTHS5441T1 Rochester Electronics LLC

3900mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 1206A-03, CHIPFET-8