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NTMYS3D3N06CLTWG - onsemi

Description: Power MOSFET, Single N-Channel, 60 V, 3.0 mOhms, 133 A

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NTMYS3D3N06CLTWG Details

  • Manufacturer Part Number:

    NTMYS3D3N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-4

  • Package Description:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    811 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

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NTMYS3D3N06CLTWG Overview

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Part Image NVMYS3D3N06CLTWG onsemi

Power Field-Effect Transistor, 26A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET