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NVD5890NLT4G - onsemi

Description: Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK, Logic Level. T4G

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NVD5890NLT4G Details

  • Manufacturer Part Number:

    NVD5890NLT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    123 A

  • Drain-source On Resistance-Max:

    0.0055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    107 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVD5890NLT4G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom of the package. A detailed layout guide can be found in the onsemi application note AND9093/D.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range, and the thermal shutdown feature should be enabled to prevent overheating.
  • The maximum allowed voltage on the VIN pin is 36V, but it's recommended to operate the device with a maximum input voltage of 32V to ensure reliable operation and to prevent damage from voltage spikes.
  • The power dissipation of the device can be calculated using the formula: Pd = (VIN x IIN) + (VOUT x IOUT). The input current (IIN) and output current (IOUT) can be calculated based on the application requirements, and the input and output voltages (VIN and VOUT) should be taken from the datasheet or measured in the application.
  • The recommended input capacitor value is 10uF to 22uF, and it should be a low-ESR ceramic capacitor with an X7R or X5R dielectric. The capacitor should be placed as close as possible to the VIN pin to minimize noise and ensure stable operation.

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Part Image NVD5890NT4G onsemi

Power Field-Effect Transistor, 123A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET