Part Image

NVMFS5C423NLAFT1G - onsemi

Description: RoHS Compliant; AEC−Q101 Qualified and PPAP Capable; NVMFS5C423NLWF − Wettable Flank Option; Low QG and Capacitance; Low RDS(on); Small Footprint (5x6 mm)

Download NVMFS5C423NLAFT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
NVMFS5C423NLAFT1G - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

NVMFS5C423NLAFT1G Details

  • Manufacturer Part Number:

    NVMFS5C423NLAFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-04-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    150 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C423NLAFT1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal resistance. Also, consider using thermal protection circuits to prevent overheating.
  • Exceeding the maximum junction temperature can lead to reduced lifespan, decreased performance, and potentially even device failure. It is essential to ensure that the device operates within the recommended temperature range.
  • Yes, the NVMFS5C423NLAFT1G is suitable for high-reliability applications. However, it is essential to follow proper design and manufacturing guidelines to ensure the device operates within its recommended specifications.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, to protect the NVMFS5C423NLAFT1G from electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

NVMFS5C423NLAFT1G Overview

Use the download button to access the NVMFS5C423NLAFT1G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMFS5C423NLAFT1G

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

NVMFS5C423NLAFT1G Alternates

Showing results

Image Part Number Model
Part Image NVMFS5C423NLWFT1G onsemi

Power Field-Effect Transistor, 150A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C423NLT3G onsemi

Power Field-Effect Transistor, 150A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET