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NXH450N65L4Q2F2SG - onsemi

Description: Power Integrated Module (PIM), I-Type NPC 650 V, 450 A IGBT, 650 V, 375 A Diode

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NXH450N65L4Q2F2SG Details

  • Manufacturer Part Number:

    NXH450N65L4Q2F2SG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    Q2

  • Manufacturer Package Code:

    180BE

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-04-27

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    280 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    5.2 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X40

  • Number of Elements:

    2

  • Number of Terminals:

    40

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    633 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    978 ns

  • Turn-on Time-Nom (ton):

    192 ns

  • VCEsat-Max:

    2.2 V

NXH450N65L4Q2F2SG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NXH450N65L4Q2F2SG is -55°C to 150°C, as specified in the datasheet.
  • To ensure safe operating area, follow the guidelines in the datasheet, including limiting the drain-source voltage, drain current, and power dissipation. Additionally, consider the thermal management and heat sink design to prevent overheating.
  • The recommended gate drive voltage for the NXH450N65L4Q2F2SG is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To handle the high peak current capability of the NXH450N65L4Q2F2SG, ensure that the PCB design and layout can handle the high current density. Use thick copper traces, and consider using multiple layers or a dedicated current path to minimize resistance and inductance.
  • The NXH450N65L4Q2F2SG has an ESD rating of HBM (Human Body Model) 2kV and MM (Machine Model) 200V. Handle the device with ESD-protective equipment, and follow proper handling and storage procedures to prevent ESD damage.

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NXH450N65L4Q2F2SG Overview

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