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PMN55LN - Nexperia

Description: FET

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PCB Footprints
PMN55LN - Nexperia PCB footprint - Other - Other - SOT95P275X110-6N
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PMN55LN Details

  • Manufacturer Part Number:

    PMN55LN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-74, SOT-457, TSOP-6

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.1 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    110 pF

  • JESD-30 Code:

    R-PDSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.75 W

  • Pulsed Drain Current-Max (IDM):

    16.5 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Power Field-Effect Transistor, 4.1A I(D), 20V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image PMN55LN NXP Semiconductors

Power Field-Effect Transistor, 4.1A I(D), 20V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image PMN55LN,135 Nexperia

Power Field-Effect Transistor, 4.1A I(D), 20V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET