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SCTWA35N65G2V4AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package/02

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SCTWA35N65G2V4AG Details

  • Manufacturer Part Number:

    SCTWA35N65G2V4AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTWA35N65G2V4AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTWA35N65G2V4AG is -55°C to 175°C, as specified in the datasheet.
  • To ensure safe operating area (SOA), follow the guidelines in the datasheet, considering factors like drain-source voltage, drain current, and temperature. Additionally, use a thermal model to estimate the junction temperature and ensure it stays within the recommended range.
  • The recommended gate drive voltage for the SCTWA35N65G2V4AG is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To minimize power losses, optimize the gate drive circuitry, ensure proper thermal management, and consider using a low-loss gate driver IC. Additionally, select a suitable switching frequency and ensure the MOSFET is operated within its recommended specifications.
  • Yes, the SCTWA35N65G2V4AG is suitable for high-frequency switching applications due to its low gate charge, low output capacitance, and fast switching times. However, the maximum switching frequency will depend on the specific application and circuit design.

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SCTWA35N65G2V4AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image SCTWA35N65G2V-4 STMicroelectronics

Power Field-Effect Transistor, 45A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET