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SI2302DS,215 - Nexperia

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SI2302DS,215 Details

  • Manufacturer Part Number:

    SI2302DS,215

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-236

  • Package Description:

    MINIATURE, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT23

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.83 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2302DS,215 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the analog and digital sections separate, and use a common ground point for the analog and digital grounds.
  • Use a shielded enclosure, keep the device away from high-frequency sources, and ensure proper grounding and decoupling. Follow the guidelines in the NXP application note AN11535 for more information.
  • The maximum allowed voltage on the VDD pin is 3.6V. Exceeding this voltage may damage the device.
  • Use a thermal pad or a heat sink to dissipate heat. Ensure good airflow around the device, and avoid blocking the thermal pad. Follow the guidelines in the NXP application note AN11535 for more information.
  • The recommended clock frequency is 25 MHz, but the device can operate up to 50 MHz. However, higher frequencies may require additional decoupling and layout considerations.

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SI2302DS,215 Overview

Use the download button to access the SI2302DS,215 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SI230, or try a keyword search, such as Small Signal Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Image Part Number Model
Part Image SI2302DS,215 NXP Semiconductors

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2302DST/R NXP Semiconductors

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2302DS-T1 Vishay Intertechnologies

Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image SI2302DS-T1 Vishay Siliconix

Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image SI2302DS Nexperia

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for SI2302DS,215, check out Findchips.com