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TIP120 - onsemi

Description: Last Shipments - Medium Power NPN Darlington Bipolar Power Transistor

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Symbol
TIP120 - onsemi - PCB symbol
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PCB Footprints
TIP120 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 height 4.83
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3D Models
TIP120 - onsemi - 3D model - Transistor Outline, Vertical - TO−220 height 4.83
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TIP120 Details

  • Manufacturer Part Number:

    TIP120

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

TIP120 Frequently Asked Questions (FAQs)

  • The maximum collector-emitter voltage (Vce) for the TIP120 is 60V. Exceeding this voltage may damage the transistor.
  • The base resistor value can be calculated using the formula: Rb = (Vcc - Vbe) / Ib, where Vcc is the supply voltage, Vbe is the base-emitter voltage (typically 1.8V), and Ib is the desired base current.
  • The TIP120 can handle a maximum collector current (Ic) of 5A. Exceeding this current may cause the transistor to overheat or fail.
  • The TIP120 is not suitable for high-frequency switching applications due to its relatively slow switching times (turn-on time: 3μs, turn-off time: 6μs). For high-frequency applications, consider using a faster switching transistor or a dedicated high-frequency switch.
  • To protect the TIP120 from back-EMF, use a flyback diode (also known as a freewheeling diode) in parallel with the inductive load. This diode allows the current to continue flowing when the transistor is turned off, preventing voltage spikes that could damage the transistor.

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TIP120 Overview

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TIP120 Alternates

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Image Part Number Model
Part Image TIP120G onsemi

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image TIP120 General Transistor Corp

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image TIP120 Diotec Semiconductor AG

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image TIP120 Toshiba America Electronic Components

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image TIP120 Baneasa SA

Power Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
For a full list of alternate parts for TIP120, check out Findchips.com