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MBR41H100CTG
onsemi
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1 | Low Forward Voltage: 0.67 V @ 125C; Low Power Loss/High Efficiency; High Surge Capacity; 175C Operating Junction Temperature; 40 A Total (20 A Per Diode Leg); Guard-Ring for Stress Protection; Pb-Free Package is Available Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94, V-0 @ 0.125 in; Weight: Approximately 1.9 grams; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds; AEC-Q101 Qua | Transistor Outline, Vertical | MBR41H100CTG |
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![Part Image](["https://www.onsemi.com/PowerSolutions/product.do?id=MBR41H100CTG","https://www.onsemi.com/PowerSolutions/product.do?id=MBR41H100CTG","//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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