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MBR41H100CTG - onsemi

Description: Low Forward Voltage: 0.67 V @ 125C; Low Power Loss/High Efficiency; High Surge Capacity; 175C Operating Junction Temperature; 40 A Total (20 A Per Diode Leg); Guard-Ring for Stress Protection; Pb-Free Package is Available Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94, V-0 @ 0.125 in; Weight: Approximately 1.9 grams; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds; AEC-Q101 Qua

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MBR41H100CTG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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MBR41H100CTG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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MBR41H100CTG Details

  • Manufacturer Part Number:

    MBR41H100CTG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    5.82

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.67 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    350 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

MBR41H100CTG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MBR41H100CTG is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure proper thermal management. Additionally, consider using a robust PCB design, and follow onsemi's recommended operating conditions.
  • The recommended land pattern for the MBR41H100CTG can be found in the onsemi application note AND8093/D, which provides detailed information on PCB layout and assembly guidelines.
  • Yes, the MBR41H100CTG is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
  • The MBR41H100CTG has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.

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MBR41H100CTG Overview

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Part Image MBR41H100CTH onsemi

Rectifier Diode, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB

Part Image MBR41H100CT onsemi

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB