MBR41 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Low Forward Voltage: 0.67 V @ 125C; Low Power Loss/High Efficiency; High Surge Capacity; 175C Operating Junction Temperature; 40 A Total (20 A Per Diode Leg); Guard-Ring for Stress Protection; Pb-Free Package is Available Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94, V-0 @ 0.125 in; Weight: Approximately 1.9 grams; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds; AEC-Q101 Qua Transistor Outline, Vertical MBR41H100CTG 1 Download Model
Part Image Part Image 1 Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB MBR41H100CT 0 Build or Request
Part Image Part Image 1 Rectifier Diode, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB MBR41H100CTH 0 Build or Request
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