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TN0110N3-G - Microchip

Description: MOSFET 100V 3Ohm

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TN0110N3-G Details

  • Manufacturer Part Number:

    TN0110N3-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Manufacturer Package Code:

    TO-92-3

  • Country Of Origin:

    Philippines, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    8

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    0.35 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TN0110N3-G Frequently Asked Questions (FAQs)

  • Microchip recommends a 2-layer or 4-layer PCB with a solid ground plane and thermal vias to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended.
  • Ensure proper thermal management, use a stable power supply, and follow the recommended operating conditions. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • The TN0110N3-G has built-in ESD protection diodes on all pins. However, it's still recommended to follow proper ESD handling procedures during assembly and testing. For latch-up prevention, ensure that the device is powered up and down slowly, and avoid voltage spikes or transients.
  • Yes, the TN0110N3-G is suitable for high-reliability and safety-critical applications. However, it's essential to follow Microchip's guidelines for design, testing, and manufacturing to ensure the device meets the required standards and regulations.
  • Follow the recommended soldering profile: peak temperature 240°C, time above 217°C 60-90 seconds. For rework, use a low-temperature soldering iron (350°F/175°C) and avoid applying excessive heat or force, which can damage the device.

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TN0110N3-G Overview

Use the download button to access the TN0110N3-G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like TN011, or try a keyword search, such as Small Signal Field-Effect Transistors

About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Part Image TN0110N3-GP003 Microchip Technology Inc

Small Signal Field-Effect Transistor, 0.35A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image TN0110N3-GP002 Microchip Technology Inc

Small Signal Field-Effect Transistor, 0.35A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92