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TN0702N3-G - Microchip

Description: Power MOSFET, N Channel, 20 V, 530 mA, 1 ohm, TO-92, Through Hole

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TN0702N3-G - Microchip - PCB symbol
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PCB Footprints
TN0702N3-G - Microchip PCB footprint - Other - Other - TO-92
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3D Models
TN0702N3-G - Microchip - 3D model - Other - TO-92
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TN0702N3-G Details

  • Manufacturer Part Number:

    TN0702N3-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Manufacturer Package Code:

    TO-92-3

  • Country Of Origin:

    Philippines, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    10

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.53 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TN0702N3-G Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer. This helps to dissipate heat efficiently. Additionally, ensure that the PCB layout allows for good airflow around the device.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within the recommended temperature range (–40°C to +125°C). Also, consider using a heat sink or thermal interface material to improve heat dissipation. Finally, ensure that the PCB design and layout are optimized for thermal performance.
  • The recommended soldering conditions for the TN0702N3-G are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. It is also recommended to use a solder with a melting point of 217°C to 220°C.
  • To handle ESD protection for the TN0702N3-G, ensure that all personnel handling the device wear anti-static wrist straps or use anti-static mats. Also, use ESD-protected workstations and storage containers. Finally, consider using ESD protection devices such as TVS diodes or ESD arrays in the circuit design.
  • The recommended storage conditions for the TN0702N3-G are: temperature range of –40°C to +125°C, humidity of 60% or less, and protection from direct sunlight and moisture. Store the devices in their original packaging or in a dry, clean environment.

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TN0702N3-G Overview

Use the download button to access the TN0702N3-G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TN070, or try a keyword search, such as Small Signal Field-Effect Transistors

About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Small Signal Field-Effect Transistor, 0.53A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92