TP65H150BG4JSG-TR - Renesas Electronics
Description: The TP65H150BG4JSG 650V 150mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.The TP65H150BG4JSG is offered in an industry-standard PQFN56 with a common source package configuration.
ECAD model is currently unavailable for this part
