Part Image

UMD2NFHATR - ROHM Semiconductor

Description: NPN+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive

Download UMD2NFHATR Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
UMD2NFHATR - ROHM Semiconductor  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

UMD2NFHATR Details

  • Manufacturer Part Number:

    UMD2NFHATR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-88, SOT-363, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 1.0

  • Collector Current-Max (IC):

    0.1 A

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    56

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN/PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

UMD2NFHATR Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • ROHM recommends derating the device's power dissipation according to the ambient temperature. For example, at 125°C, the power dissipation should be limited to 50% of the maximum rating.
  • Although the datasheet doesn't specify a maximum input voltage, ROHM recommends limiting the input voltage to 5.5V to prevent damage to the internal ESD protection diodes.
  • Yes, the UMD2NFHATR is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout is optimized for high-frequency operation, and consider the device's switching losses and thermal performance.
  • The POR and BOR functions are internally implemented and do not require external components. However, ensure that the power supply ramp-up time is slow enough to allow the internal POR and BOR circuits to function correctly.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

UMD2NFHATR Overview

Use the download button to access the UMD2NFHATR 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like UMD2N, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to UMD2NFHATR

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

UMD2NFHATR Alternates

Showing results

Image Part Number Model
Part Image UMD2NTR ROHM Semiconductor

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Part Image UMD2NTN ROHM Semiconductor

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Part Image UMD2NTL ROHM Semiconductor

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon