FCD260N65S3 - onsemi

Description: Optimized Capacitance; Internal Gate resistance: 8.7ohm; 700 V @ TJ = 150 °C; Typ. RDS(on) = 222 mΩ; Ultra Low Gate Charge (Typ. Qg= 24 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF); 100% Avalanche Tested; RoHS Compliant RoHS Compliant; Wave soldering guarantee

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