FCD3400N80Z - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 7.4 nC); Low Eoss (Typ. 0.9 uJ @ 400V); ESD Improved Capability; RDS(on) = 2.75 Ω (Typ.); 100% Avalanche Tested; RoHS Compliant; Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)