FCH072N60F - onsemi
Description: Typ. RDS(on) = 65 mΩ; 650 V @ TJ= 150°C; Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF); RoHS Compliant Compliant; Ultra Low Gate Charge (Typ. Qg= 165 nC); 100% Avalanche Tested
Description: Typ. RDS(on) = 65 mΩ; 650 V @ TJ= 150°C; Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF); RoHS Compliant Compliant; Ultra Low Gate Charge (Typ. Qg= 165 nC); 100% Avalanche Tested
