FCMT125N65S3 - onsemi

Description: Leadless Ultra-thin SMD package; Ultra Low Gate Charge (Typ. Qg = 49 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF); Optimized Capacitance; Typ. RDS(on) = 100 mΩ; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.5 Ω; Kelvin contact; 700 V @ TJ = 150 oC