FCP099N65S3 - onsemi
Description: Ultra Low Gate Charge (Typ. Qg = 61 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF); Optimized Capacitance; Typ. RDS(on) = 79 mΩ; 100% Avalanche Tested; RoHS Compliant; 700 V @ TJ = 150 oC
Description: Ultra Low Gate Charge (Typ. Qg = 61 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF); Optimized Capacitance; Typ. RDS(on) = 79 mΩ; 100% Avalanche Tested; RoHS Compliant; 700 V @ TJ = 150 oC
