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FCP099N65S3 - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 61 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF); Optimized Capacitance; Typ. RDS(on) = 79 mΩ; 100% Avalanche Tested; RoHS Compliant; 700 V @ TJ = 150 oC

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FCP099N65S3 - onsemi - PCB symbol
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PCB Footprints
FCP099N65S3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220_(H=4.7mm)
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3D Models
FCP099N65S3 - onsemi - 3D model - Transistor Outline, Vertical - TO−220_(H=4.7mm)
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FCP099N65S3 Details

  • Manufacturer Part Number:

    FCP099N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2017-06-20

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    145 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.099 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    227 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCP099N65S3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCP099N65S3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the top of the package using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the FCP099N65S3 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI emissions.
  • To protect the FCP099N65S3 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • To minimize parasitic inductance and ensure reliable operation, use a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. Keep the high-frequency loops small and use a Kelvin connection for the gate drive signal. Avoid using vias under the device and keep the PCB traces as short and wide as possible.

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FCP099N65S3 Overview

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