FCP09 Model Download Search Results
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FCP099N60E
onsemi
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1 | RoHS Compliant; Ultra Low Gate Charge (Typ. Qg = 88nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF); 100% Avalanche Tested; 650 V @ TJ = 150°C; Typ. RDS(on) = 87 mΩ | Transistor Outline, Vertical | FCP099N60E |
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FCP099N65S3
onsemi
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1 | Ultra Low Gate Charge (Typ. Qg = 61 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF); Optimized Capacitance; Typ. RDS(on) = 79 mΩ; 100% Avalanche Tested; RoHS Compliant; 700 V @ TJ = 150 oC | Transistor Outline, Vertical | FCP099N65S3 |
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FCP099N60E
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FCP099N60E |
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HY5FS123235AFCP-09
SK Hynix Inc
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1 | DDR4 DRAM, 16MX32, 0.2ns, CMOS, PBGA136 | HY5FS123235AFCP-09 |
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RFCP-09S0-RJ-M
JST Manufacturing
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1 | Board Connector, 9 Contact(s), 1 Row(s), Male, Locking, Green Insulator, Plug | RFCP-09S0-RJ-M |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/bga_144.jpg"])
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