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FCP099N60E - onsemi

Description: RoHS Compliant; Ultra Low Gate Charge (Typ. Qg = 88nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF); 100% Avalanche Tested; 650 V @ TJ = 150°C; Typ. RDS(on) = 87 mΩ

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PCB Footprints
FCP099N60E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 3L_1
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3D Models
FCP099N60E - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 3L_1
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FCP099N60E Details

  • Manufacturer Part Number:

    FCP099N60E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    809 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.099 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Pulsed Drain Current-Max (IDM):

    111 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    248 ns

  • Turn-on Time-Max (ton):

    114 ns

FCP099N60E Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FCP099N60E is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the FCP099N60E is between 10V and 15V, with a maximum voltage of 20V.
  • Yes, the FCP099N60E is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the switching frequency is within the recommended range.
  • Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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FCP099N60E Overview

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