FCP125N65S3R0 - onsemi

Description: 700 V @ TJ = 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF); Ultra Low Gate Charge (Typ. Qg = 46 nC); Optimized Capacitance; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 105 mΩ; Internal Gate Resistance: 0.5 Ω

Download FCP125N65S3R0 Model

Schematic
symbols

PCB
footprints

3D
models