FCP165N65S3 - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 39 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF); Optimized Capacitance; Internal Gate Resistance: 4.6 Ω; Typ. RDS(on) = 140 mΩ; 100% Avalanche Tested; RoHS Compliant

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