FCP220N80 - onsemi

Description: ESD Improved Capability; Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF); 100% Avalanche Tested; Ultra Low Gate Charge (Typ. Qg = 78 nC); Low Eoss (Typ. 7.5 uJ @ 400 V); RoHS Compliant; Typ. RDS(on) = 188 mΩ