FCP650N80Z - onsemi
Description: RDS(on) = 530 mΩ(Typ.); Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF); ESD Improved Capability; RoHS Compliant; Ultra Low Gate Charge (Typ. Qg = 27 nC); 100% Avalanche Tested; Low Eoss (Typ. 2.8 uJ @ 400V)
