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FCP650N80Z - onsemi

Description: RDS(on) = 530 mΩ(Typ.); Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF); ESD Improved Capability; RoHS Compliant; Ultra Low Gate Charge (Typ. Qg = 27 nC); 100% Avalanche Tested; Low Eoss (Typ. 2.8 uJ @ 400V)

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PCB Footprints
FCP650N80Z - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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3D Models
FCP650N80Z - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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FCP650N80Z Details

  • Manufacturer Part Number:

    FCP650N80Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    204 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.65 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    162 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    107 ns

  • Turn-on Time-Max (ton):

    76 ns

FCP650N80Z Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FCP650N80Z is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material with a thermal conductivity of at least 1 W/m-K.
  • The recommended gate drive voltage for the FCP650N80Z is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
  • Yes, the FCP650N80Z can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive signals are properly synchronized to prevent shoot-through currents.
  • The maximum allowed dv/dt for the FCP650N80Z is 10 kV/μs, but it's recommended to limit it to 5 kV/μs or less to prevent voltage overshoots and ensure reliable operation.

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