FCP65 Model Download Search Results
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FCP650N80Z
onsemi
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1 | RDS(on) = 530 mΩ(Typ.); Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF); ESD Improved Capability; RoHS Compliant; Ultra Low Gate Charge (Typ. Qg = 27 nC); 100% Avalanche Tested; Low Eoss (Typ. 2.8 uJ @ 400V) | Transistor Outline, Vertical | FCP650N80Z |
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FCP650N80Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FCP650N80Z |
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