FCP850N80Z - onsemi

Description: Low Eoss (Typ. 2.3 uJ @ 400V); ESD Improved Capability; 100% Avalanche Tested; RoHS Compliant; Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF); Ultra Low Gate Charge (Typ. Qg = 22 nC); Typ. RDS(on) = 710 mΩ(Typ.)