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FCP850N80Z - onsemi

Description: Low Eoss (Typ. 2.3 uJ @ 400V); ESD Improved Capability; 100% Avalanche Tested; RoHS Compliant; Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF); Ultra Low Gate Charge (Typ. Qg = 22 nC); Typ. RDS(on) = 710 mΩ(Typ.)

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PCB Footprints
FCP850N80Z - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_2023-1
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3D Models
FCP850N80Z - onsemi  - 3D model - Transistor Outline, Vertical - TO-220_2023-1
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FCP850N80Z Details

  • Manufacturer Part Number:

    FCP850N80Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    114 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.85 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    109 ns

  • Turn-on Time-Max (ton):

    72 ns

FCP850N80Z Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FCP850N80Z is -55°C to 150°C.
  • To ensure proper biasing, the FCP850N80Z requires a gate-source voltage (Vgs) of 10-15V and a drain-source voltage (Vds) of 400-500V. Additionally, a gate resistor (Rg) of 1-10kΩ is recommended to limit the gate current.
  • For optimal thermal performance, it is recommended to use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. The PCB layout should also minimize parasitic inductance and ensure good thermal conduction.
  • To protect the FCP850N80Z from overvoltage and overcurrent conditions, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode, as well as a current sense resistor and a fuse or a current limiter.
  • The recommended gate drive circuits for the FCP850N80Z include a totem pole configuration with a gate driver IC, such as the UCC37322 or the FAN5350, and a bootstrap capacitor to ensure proper gate-source voltage.

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FCP850N80Z Overview

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