FCP85 Model Download Search Results
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FCP850N80Z
onsemi
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1 | Low Eoss (Typ. 2.3 uJ @ 400V); ESD Improved Capability; 100% Avalanche Tested; RoHS Compliant; Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF); Ultra Low Gate Charge (Typ. Qg = 22 nC); Typ. RDS(on) = 710 mΩ(Typ.) | Transistor Outline, Vertical | FCP850N80Z |
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FCP850N80Z
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FCP850N80Z |
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