FCPF11N60T - onsemi
Description: Typ. Rds(on)=0.32Ω; RoHS Compliant; 650V @Tj = 150°C; Ultra low gate charge (typ. Qg=40nC); 100% avalanche tested; Low effective output capacitance (typ. Coss.eff=95pF)
Description: Typ. Rds(on)=0.32Ω; RoHS Compliant; 650V @Tj = 150°C; Ultra low gate charge (typ. Qg=40nC); 100% avalanche tested; Low effective output capacitance (typ. Coss.eff=95pF)
