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FCPF11N60T - onsemi

Description: Typ. Rds(on)=0.32Ω; RoHS Compliant; 650V @Tj = 150°C; Ultra low gate charge (typ. Qg=40nC); 100% avalanche tested; Low effective output capacitance (typ. Coss.eff=95pF)

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FCPF11N60T Details

  • Manufacturer Part Number:

    FCPF11N60T

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    82 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    370 ns

  • Turn-on Time-Max (ton):

    285 ns

FCPF11N60T Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FCPF11N60T can withstand is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and the heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate resistor value for the FCPF11N60T is between 10Ω and 100Ω. A higher value can help reduce electromagnetic interference (EMI), but may slow down the switching speed.
  • Yes, the FCPF11N60T is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • To protect the FCPF11N60T from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FCPF11N60T Overview

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