FCPF190N65S3R0L - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 33 nC); Optimized Capacitance; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 159 mΩ; Internal Gate Resistance: 0.5 Ω; 700 V @ TJ = 150 °C; Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)