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FCPF190N65S3R0L - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 33 nC); Optimized Capacitance; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 159 mΩ; Internal Gate Resistance: 0.5 Ω; 700 V @ TJ = 150 °C; Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)

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PCB Footprints
FCPF190N65S3R0L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 FULLPAK 3LD CASE 340BF ISSUE O-1
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FCPF190N65S3R0L - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 FULLPAK 3LD CASE 340BF ISSUE O-1
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FCPF190N65S3R0L Details

  • Manufacturer Part Number:

    FCPF190N65S3R0L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    340BF

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    76 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    42.5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF190N65S3R0L Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the bottom layer to improve heat dissipation.
  • To ensure the device is properly biased for optimal performance, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves using a gate driver with a suitable voltage rating and ensuring the gate-source voltage (Vgs) is within the recommended range. Additionally, it's crucial to provide a low-impedance power supply and to decouple the device with suitable capacitors.
  • The critical parameters to monitor during operation to prevent device failure include the junction temperature (Tj), drain-source voltage (Vds), gate-source voltage (Vgs), and drain current (Id). It's essential to ensure these parameters are within the recommended operating ranges to prevent overheating, overvoltage, and overcurrent conditions that can lead to device failure.
  • To select the right gate driver for the FCPF190N65S3R0L, consider the following factors: the gate driver's output voltage rating, current capability, rise and fall times, and propagation delay. The gate driver should be able to provide a voltage rating that meets or exceeds the device's Vgs rating, and its current capability should be sufficient to charge and discharge the device's input capacitance quickly enough to prevent shoot-through currents.
  • Operating the device near its maximum ratings can lead to reduced reliability, increased thermal stress, and decreased performance. It's essential to ensure that the device is operated within its recommended operating ranges to prevent premature failure and to maintain optimal performance. Operating near maximum ratings can also lead to increased power losses, which can further exacerbate thermal stress and reduce overall system efficiency.

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