FDB0165N807L - onsemi
Description: Fast Switching Speed ; High Performance Trench Technology for Extremely Low rDS(on) ; Low Gate Charge ; Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A ; High Power and Current Handling Capability ; RoHS Compliant
Description: Fast Switching Speed ; High Performance Trench Technology for Extremely Low rDS(on) ; Low Gate Charge ; Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A ; High Power and Current Handling Capability ; RoHS Compliant
