FDB0260N1007L - onsemi
Description: High Performance Trench Technology for Extremely Low RDS(on) ; Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A ; Low Gate Charge ; RoHS Compliant ; High Power and Current Handling Capability ; Fast Switching Speed
Description: High Performance Trench Technology for Extremely Low RDS(on) ; Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A ; Low Gate Charge ; RoHS Compliant ; High Power and Current Handling Capability ; Fast Switching Speed
