FDB0300N1007L - onsemi

Description: Max rDS(on) = 3 mΩ at VGS = 10 V, ID = 26 A ; Max rDS(on) = 4.5 mΩ at VGS = 6 V, ID = 20 A ; Low Gate Charge ; High Performance Trench Technology for Extremely Low RDS(on) ; RoHS Compliant ; High Power and Current Handling Capability ; Fast Switching Speed