FDB035AN06A0 - onsemi
Description: Low Qrr Body Diode; UIS Capability (Single Pulse and Repetitive Pulse); Qualified to AEC Q101; Low Miller Charge; QG(tot) = 95nC (Typ.) @ VGS = 10V; RDS(on) = 3.2mΩ (Typ.) @ VGS = 10V, ID = 80A
Description: Low Qrr Body Diode; UIS Capability (Single Pulse and Repetitive Pulse); Qualified to AEC Q101; Low Miller Charge; QG(tot) = 95nC (Typ.) @ VGS = 10V; RDS(on) = 3.2mΩ (Typ.) @ VGS = 10V, ID = 80A
