FDB15N50 - onsemi

Description: Reduced RDS(on) ( 330mΩ ( Typ.)@ VGS = 10V, ID = 7.5A); 175oC rated junction temperature; Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 16pF); Low gate charge Qg results in simple drive requirement ( Typ. 33nC); Improved Gate, avalanche and high reapplied dv/dt ruggedness; Improved switching speed with low EMI