FDB52N20TM - onsemi
Description: RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 26A; Low Crss ( Typ. 66pF); 100% avalanche tested; Low gate charge ( Typ. 49nC)
Description: RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 26A; Low Crss ( Typ. 66pF); 100% avalanche tested; Low gate charge ( Typ. 49nC)
