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FDB52N20TM - onsemi

Description: RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 26A; Low Crss ( Typ. 66pF); 100% avalanche tested; Low gate charge ( Typ. 49nC)

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PCB Footprints
FDB52N20TM - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FDB52N20TM - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FDB52N20TM Details

  • Manufacturer Part Number:

    FDB52N20TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    59 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    2520 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Pulsed Drain Current-Max (IDM):

    208 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB52N20TM Frequently Asked Questions (FAQs)

  • The maximum SOA for the FDB52N20TM is typically defined by the device's voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the application and operating conditions.
  • To ensure proper thermal management, it's crucial to provide adequate heat sinking, such as using a heat sink or thermal interface material, and to follow the recommended PCB layout and thermal design guidelines outlined in the datasheet and application notes.
  • The recommended gate drive circuits for the FDB52N20TM typically involve using a gate driver IC, such as the FAN5350, along with a suitable gate resistor and capacitor. Consult the datasheet and application notes for specific guidance on gate drive circuit design.
  • To handle ESD protection for the FDB52N20TM, it's essential to follow proper handling and storage procedures, use ESD-protective packaging, and incorporate ESD protection devices, such as TVS diodes, into the circuit design.
  • The reliability and lifespan expectations for the FDB52N20TM are typically dependent on factors such as operating conditions, temperature, and usage patterns. Consult the datasheet and reliability reports for specific information on the device's expected lifespan and reliability.

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FDB52N20TM Overview

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