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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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FDB52N20TM
onsemi
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1 | RDS(on) = 49mΩ ( Max.)@ VGS = 10V, ID = 26A; Low Crss ( Typ. 66pF); 100% avalanche tested; Low gate charge ( Typ. 49nC) | Other | FDB52N20TM |
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FDB52N20
onsemi
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1 | Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDB52N20 |
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FDB52N20
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDB52N20 |
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FDB52N20TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | FDB52N20TM |
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